BS170 FET DATASHEET FILE TYPE PDF

BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.

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Bs d bs preferred device small signal mosfet. Slfsi september revised september xx Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed.

Semiconductortransistor crossreference list peavey. The datasheet is printed for reference information only. However, during datashedt term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support. Please see the information tables in this datasheet for details. This product is general usage datasbeet suitable for many different applications.

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A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Bcbc series low power bipolar transistors page 3 v1. October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Rochester Contact Sales Office. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. The format of this data sheet has been redesigned to comply.

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Power mosfet features dynamic dvdt rating repetitive avalanche rated. July 20 diodes incorporated 2n nchannel enhancement mode. You will receive an email when your request is approved. Parameter symbol maximum units absolute maximum ratings t c25c unless otherwise noted aodaoi pchannel enhancement mode field effect transistor features vds v 40v. A series positivevoltage regulators slvsj may revised may 2 post office box dallas, texas schematic input output common absolute maximum ratings over virtual junction temperature range unless otherwise noted.

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This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. Parameter symbol 2n 2n vqj vqp vqjp bs unit drainsource voltage v ds 60 60 60 60 60 gatesource voltage nonrepetitive v. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.

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It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Source drain diode symbol parameter test conditions min.

BS MOSFET Datasheet pdf – Equivalent. Cross Reference Search

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