IRF9Z24N. Overview. Buy online. Data Sheet – IRF9Z24NEN. | pdf | KB. V Single P-Channel HEXFET Power MOSFET in a TOAB. IRF9Z24N V Single P-channel HexFET Power MOSFET in a TOAB Package. Advanced Process Technology Dynamic dv/dt Rating l °C Operating. IRF9Z24N. HEXFET® Power MOSFET. PD B. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve.

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Will usually ship within 3 business days of receiving cleared payment – opens in a new window or tab. Idss min A Gfs min. A free wheeling diode is included with the half-controlled bridges which are in B2HKF configuration.

Seller information liaoxiyuan A brand-new, unused, unopened, undamaged item in its original packaging where packaging is applicable. Read more about the condition. Auxiliary gate and cathode leads are supplied separately. V 32 32 40 Vbo max. V 28 28 35 Vbo typ. Please enter a number less than or equal to 1, Learn More – opens in a new window or tab Xatasheet international shipping and import charges are paid in part to Pitney Bowes Inc.

Any international shipping and import charges are paid in part to Pitney Bowes Inc.

10PCS IRF9Z24N TO220 F9Z24N TO-220 new original free shipping

Walk With Ease Class Datasbeet. Order Code List No. Namely, the datasheet says with a HIGH output then it appears to allude to sinking 15mA indicated by the negative sign.


Mouse over to Zoom – Click to enlarge. IP Tests 0 No protection 1 Protected against solid objects up to 50mm, e. V 30 Max. Over temperature and short cct. These ratings are per pin.

Datasheets search archive of electronic components datasheets

Order code incorporates a thermistor datawheet to allow for fan speed regulation in heating, ventilation and air conditioning systems. Insulation Group A Relates to equipment located in air conditioned, clean, dry locations and protected by acceptable measures. A 20 35 50 56 60 70 85 Ic max.

This item will ship to United Statesbut the seller has fatasheet specified shipping options. No band on bipolar type. IP Tests 0 No protection.

IRF9Z24N (IRF) – Power Mosfet(vdss=v, Rds(on)=ohm, Id=a), P-Channel

V mA V N Channel 15 10 7. Low turn-off voltage, as low as 0. The vertical tests measure the extinguishing time and whether any flame drips burning droplets fall onto and ignite gauze. Semiconductors — Discretes 6 Page 1. V 30 30 30 60 30 50 60 60 60 30 45 45 80 80 80 60 60 80 45 45 60 60 60 60 80 80 60 80 60 60 80 80 80 80 80 60 80 80 80 80 80 80 80 80 80 80 80 60 hFE IC min. The stand-off voltage is the maximum reverse voltage that can be applied without causing significant reverse dissipation.


A 20 25 — — — — — — continued Internet www. Opto-isolated output stages eliminate the need for phase timing or matching. Flame drips which ignite ULHB Reduced burning rate when burnt horizontally The UL specifications above are flammability tests carried out on plastic materials by the Underwriters Laboratory. Subject to credit approval. Documents Flashcards Grammar checker.

V 8 typ. V Package F typ.

The isolated base allows mounting on an earthed heatsink alongside other modules and devices. Add to watch list. Suitable for AC or DC, resistive or inductive loads, via thyristor or hybrid diode modules.

IRF9Z24N (IRF) PDF技术资料下载 IRF9Z24N 供应信息 IC Datasheet 数据表 (2/8 页)

V — max. Interest will be charged to your account from the purchase date if the balance is not paid in full within 6 months.

Unidirec- Bidirectional tional a. Device Order List No.

Under voltage detection VCC 6. Voltage, V List No.