Industrial furnace. Fig. 3 Schematic representation of the Kyropoulos method. Pull. Seed. Crucible. Crystal. Melt. Bottom heater. Thermal insulation. Side heater . The Czochralski (CZ) method of crystal growth was discovered in by Jan In the Kyropoulos method, pure alumina powder is placed in a crucible and. Kyropoulos method. The method was developed in and consists from smooth crystal growth at low temperature gradient. And lowered melt level.

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After being modified by the State Optical Institute in Russia, this method became applicable to the growth of sapphire. The Kyropoulos process is a method of bulk crystal growth used to obtain single crystals. In the ensuing decades, new methods of synthesizing sapphire have emerged, and many have since been customized into proprietary processes used by manufacturers worldwide. Kyropoulos kyopoulos growth mono-crystal furnace crucible detachment method, temperature control method methid control method.

This page was last edited on 2 Decemberat Cooling method for whole kyropoulos large-sized sapphire crystal growing process.

Intechnician Harold Labelle was enlisted by Tyco Industries in Waltham, MA to develop a process for growing sapphire fibers as reinforcement for metal-matrix compounds.

The use of such a facility some what expedites the control of the crystallization course for operators. One of the automation methods uses weighing facilities. It is most often used for mechanical, industrial and lesser-grade optical applications. He introduced temperature control to the process to increase the size of the resulting crystals.

The process also allows for tight control over crystal orientation.

Kyropoulos process

The Czochralski method poduced material in thin crystal filaments, and Verneuil boules had basic dimensional limitations. Result of this is crystallization of the end of a refrigerator with the subsequent formation of hemisphere.

Process for preparing gallium doped elementarysubstance solar energy single crystal. By using this site, you agree to the Terms of Use and Privacy Policy.


In contrast with kyropulos Czochralski processthe Kyropoulos process crystallizes the entire feedstock volume into the boule. Labelle observed that cold tungsten plunged into molten alumina formed small crystalline alumina dendrites on the tungsten. In the modern implementation of HEM, a sapphire seed crystal is mehod at the bottom of a crucible which is then loaded kethod pure alumina crackle, a byproduct of the Verneuil process.

After 25 hours, the crystalline mass reaches 3. For this device, the accuracy of crystal weight measurement is 1 g. The resulting kygopoulos typically have curved growth striations, which limits their use in optical applications. The size and aspect ratio of the crucible is close to that of the final crystal, and the crystal grows downward into the crucible, rather than being pulled up and out of the crucible as in the Czochralski method.

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Retrieved 16 January Eventually, dies were added with orifices of the size and shape of the desired crystal. So inSpyro Kyropulos developed a process for direct crystallization of the melt by decreasing the boule’s temperature while still in the crucible.

By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, kyroopulos cylindrical ingot from the melt. From Wikipedia, the free encyclopedia. Now it proceeds from the center to the periphery; the second maximum appears on the curve. Start the vacuum system, the furnace pressure to l T3Pa. Example particular embodiment of the present process is as follows: Like the Czochralski method, the crystal grows free of any external mechanical shaping forces, and thus has few lattice defects and low internal stress.

Kyrppoulos growth rate is controlled by slowly decreasing the temperature of the furnace until the entire melt has solidified.

Kyropoulos method – consists from smooth crystal growth at low temperature gradient.

A thin thread of metal hung from the tip of the pen. In the Kyropoulos methodpure alumina powder is placed in a crucible and brought to melting temperature. Typically the crucible is made of tungsten or molybdenum. Preparation process of M-directional monocrystal sapphire and the M-directional monocrystal sapphire. Advanced Topics on Crystal Growth.


Thus, we have created conditions favorable for the selection of geometric kernel that will be used for further crystal growth. Processes of charging, vacuumizing, heating for melting, auxiliary temperature field adjustment, crystal leading, shoulder extending, shoulder contracting, equal-diameter growth, pull-off, cooling annealing and discharging are finished in metnod growth furnace of the large-size sapphire single crystal.

As a rule, kyeopoulos is grown by Kyropoulos in vacuum without rotation. The resulting sapphire has good optical qualities, and is used widely in lasers, infrared and ultraviolet windows, transparent electronic substrates, high-temperature process windows, and other optical applications.

The increase in radiant heat removal from the end and side surfaces of the seed crystal results in the formation of a sharp cone directed deep into the melt. The chamber is then backfilled with an inert gas to prevent the introduction mrthod atmospheric gases into the melt during crystal growth.

The upward pulling of the seed is at a much slower rate than the downward growth of the crystal, and serves primarily to shape the meniscus of the solid-liquid interface via surface tension. After 15 hours, the crystalline mass reaches 4.

Instead of dipping his pen in its inkwell, he mistakenly dipped it in the crucible and quickly pulled it out. Hanging the seed from a weight sensor can provide feedback to determine the growth rate, although precise measurements are complicated by the changing and imperfect shape of the crystal diameter, the unknown convex shape of the solid-liquid interface, and these features’ interaction with buoyant forces and convection within the melt.

After 15 hours, the crystalline mass reaches 2 kg, O.