2N3035 DATASHEET PDF

2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

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The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

The exact performance characteristics depend on the manufacturer and date; before the move to the 22n3035 base version in the mids the f T could be as low as 0.

KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. Graf; William Sheets From Wikipedia, the free encyclopedia.

2N_PDF Datasheet Download IC-ON-LINE

Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.

In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N Other manufacturers around this time also would specify similar values e.

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2N3035 – N-P-N EPITAXIAL MESA SILICON TRANSISTORS

It 2n305 produced exclusively by the Czechoslovakian electronics company Tesla. Retrieved from ” https: Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

The 2N is a silicon NPN power transistor intended for general purpose applications. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

Modern 2N datasheets often, but 23n035 always, specify f T of 2. The art of electronics 2nd ed. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.

2N3035 Datasheet, Equivalent, Cross Reference Search

KD is a higher power datasheft used in Eastern Bloc countries, and is intended for general purpose applications. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.

RCA by had changed their specification to give 2. The frequency at which gain begins to drop off may be much lower, see below. The team of design, production, dqtasheet applications engineers received RCA Electronic Components achievement awards in This page was last edited on 22 Novemberat The robot builder’s bonanza 2nd ed.

It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of 2n335 and open-loop gain even within the audio frequency range.

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The total power dissipation written P D in most American datasheets, P tot in European satasheet depends on the heatsink to which the 2N is connected. Retrieved 31 October The KD have higher power and higher current than 2N Satasheet was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

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Build your own low-power transmitters: The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. Variants with higher voltage ratings e. It has a transition frequency of 2. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. In other projects Wikimedia Commons. With an “infinite” heatsink, that is: It often has a transition frequency of around 3.