Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters. TIP31A. TIP32A. TIP31C. TIP32C. Unit. Collector-Emitter Voltage. VCEO. . Disclaimer This data sheet and its contents (the “Information”) belong to the. DESCRIPTION. ·DC Current Gain -hFE = 25(Min)@ IC= A. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = 40V(Min)- TIP31; 60V(Min)- TIP31A.
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For using the TIP31C as an amplifier one needs to consider current gain characteristics. The amplifying factor of TIP31C is fairly good and the important thing is gain is almost linear.
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TIP31C High power NPN transistors
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With electrical characteristics suiting many applications it is fairly popular. Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party.
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This BASE current limiting resistor is important. Could be chosen accurately by calculating:.
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This Agreement may not be amended except in writing dahasheet by an authorized representative of each of the parties hereto. So these characteristics make TIP31C one of best contender for amplifying applications.
Log into MyON to proceed. So the component ti3p1c best suited when choosing a random switching device. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. BOM, Gerber, user manual, schematic, test procedures, etc.
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By taking these ranges into consideration we can adtasheet appropriate arrangements for better performance.
TIP31C: NPN Bipolar Power Transistor
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TIP31C High power NPN transistors | ST Microelectronics
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